Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
Identifieur interne : 000111 ( Russie/Analysis ); précédent : 000110; suivant : 000112Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
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Abstract
Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties</title><author><name sortKey="Polyakov, Alexander" uniqKey="Polyakov A">Alexander Polyakov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Rare Metals, B. Tolmachevsky, 5</s1><s2>119017 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Govorkov, Anatoliy" uniqKey="Govorkov A">Anatoliy Govorkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Rare Metals, B. Tolmachevsky, 5</s1><s2>119017 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Smirnov, Nikolay" uniqKey="Smirnov N">Nikolay Smirnov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Rare Metals, B. Tolmachevsky, 5</s1><s2>119017 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Markov, Alexander" uniqKey="Markov A">Alexander Markov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Rare Metals, B. Tolmachevsky, 5</s1><s2>119017 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Lee, In Hwan" uniqKey="Lee I">In-Hwan Lee</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University</s1><s2>Chonju 561-756</s2><s3>KOR</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Chonju 561-756</wicri:noRegion></affiliation></author><author><name sortKey="Ahn, Haeng Keun" uniqKey="Ahn H">Haeng-Keun Ahn</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University</s1><s2>Chonju 561-756</s2><s3>KOR</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Chonju 561-756</wicri:noRegion></affiliation></author><author><name sortKey="Karpov, Sergey" uniqKey="Karpov S">Sergey Karpov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Softimpact Ltd., Engels Avenue 27</s1><s2>194156 St. Petersburg</s2><s3>RUS</s3><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194156 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Pearton, Stephen" uniqKey="Pearton S">Stephen Pearton</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Materials Science and Engineering, University of Florida</s1><s2>Gainesville, FL 32611</s2><s3>USA</s3><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Gainesville, FL 32611</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0086049</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0086049 INIST</idno><idno type="RBID">Pascal:11-0086049</idno><idno type="wicri:Area/Main/Corpus">003672</idno><idno type="wicri:Area/Main/Repository">003D97</idno><idno type="wicri:Area/Russie/Extraction">000111</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CV characteristic</term><term>Concentration distribution</term><term>DLTS</term><term>Electroluminescence</term><term>Gallium Indium Nitrides Mixed</term><term>Gallium nitride</term><term>Lateral growth</term><term>MOVPE method</term><term>Multiple quantum well</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Croissance latérale</term><term>Méthode MOVPE</term><term>Caractéristique capacité tension</term><term>Distribution concentration</term><term>DLTS</term><term>Electroluminescence</term><term>Gallium Indium Nitrure Mixte</term><term>Nitrure de gallium</term><term>Puits quantique multiple</term><term>GaN</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>207</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties</s1></fA08><fA11 i1="01" i2="1"><s1>POLYAKOV (Alexander)</s1></fA11><fA11 i1="02" i2="1"><s1>GOVORKOV (Anatoliy)</s1></fA11><fA11 i1="03" i2="1"><s1>SMIRNOV (Nikolay)</s1></fA11><fA11 i1="04" i2="1"><s1>MARKOV (Alexander)</s1></fA11><fA11 i1="05" i2="1"><s1>LEE (In-Hwan)</s1></fA11><fA11 i1="06" i2="1"><s1>AHN (Haeng-Keun)</s1></fA11><fA11 i1="07" i2="1"><s1>KARPOV (Sergey)</s1></fA11><fA11 i1="08" i2="1"><s1>PEARTON (Stephen)</s1></fA11><fA14 i1="01"><s1>Institute of Rare Metals, B. Tolmachevsky, 5</s1><s2>119017 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University</s1><s2>Chonju 561-756</s2><s3>KOR</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Softimpact Ltd., Engels Avenue 27</s1><s2>194156 St. Petersburg</s2><s3>RUS</s3><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Materials Science and Engineering, University of Florida</s1><s2>Gainesville, FL 32611</s2><s3>USA</s3><sZ>8 aut.</sZ></fA14><fA20><s1>1383-1385</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000193148560280</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0086049</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C21F</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Croissance latérale</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Lateral growth</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Crecimiento lateral</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>MOVPE method</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Caractéristique capacité tension</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>CV characteristic</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Distribution concentration</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Concentration distribution</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Distribución concentración</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>DLTS</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>DLTS</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Electroluminescence</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electroluminescence</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Gallium Indium Nitrure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Gallium Indium Nitrides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>18</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>18</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>18</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>059</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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